By Mircea Dragoman, Daniela Dragoman
This booklet is devoted to the recent two-dimensional one-atomic-layer-thick fabrics comparable to graphene, steel chalcogenides, silicene and different 2nd fabrics. The ebook describes their major actual houses and purposes in nanoelctronics, photonics, sensing and computing. a wide a part of the publication offers with graphene and its extraordinary actual homes. one other vital a part of the booklet offers with semiconductor monolayers similar to MoS2 with awesome purposes in photonics, and electronics. Silicene and germanene are the atom-thick opposite numbers of silicon and germanium with amazing functions in electronics and photonics that are nonetheless unexplored. attention of two-dimensional electron fuel units finish the remedy. The physics of 2DEG is defined intimately and the purposes in THz and IR zone are discussed.
Both authors are operating presently on those 2nd fabrics constructing conception and applications.
Read Online or Download 2D Nanoelectronics: Physics and Devices of Atomically Thin Materials PDF
Best semiconductors books
Designers of high-speed built-in circuits face a bewildering array of decisions and too usually spend difficult days tweaking gates to satisfy velocity ambitions. Logical attempt: Designing quick CMOS Circuits makes excessive velocity layout more uncomplicated and extra methodical, supplying an easy and largely appropriate strategy for estimating the hold up as a result of elements reminiscent of topology, capacitance, and gate sizes.
CMOS reminiscence Circuits is a scientific and accomplished reference paintings designed to assist within the knowing of CMOS reminiscence circuits, architectures, and layout concepts. CMOS know-how is the dominant fabrication technique and nearly the specific selection for semiconductor reminiscence designers. either the amount and the range of complementary-metal-oxide-semiconductor (CMOS) thoughts are striking.
Steel Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated in the course of silicon pattern and machine fabrication. the several mechanisms chargeable for illness are mentioned, and a survey given in their effect on equipment functionality. the explicit houses of major and infrequent impurities in silicon are tested, in addition to the detection tools and standards in smooth know-how.
Assessing Nanoparticle hazards to Human well-being presents a scientific evaluate of nanoparticle dangers and considers the constraints of this paradigm in a context the place severe uncertainties succeed. in addition to exploring traditional chance overview technique, the contributing authors examine numerous exchange ways.
- Electrical and Optical Properties of Semiconductors
- Current-Driven Phenomena in Nanoelectronics
- Physical Processes and Measurement Devices
- Properties of group-IV, III-V and II-VI semiconductors
- Electrodynamic theory of superconductors
- Basic Semiconductor Physics
Additional resources for 2D Nanoelectronics: Physics and Devices of Atomically Thin Materials
59 The graphene geometric diode (from Dragoman and Dragoman 2013) y x din dout electrode L electrode 50 1 2D Carbon-Based Nanoelectronics The SEM image of the diode, as well as the graphene wafer with diodes, are shown in Fig. 60a, b. The diode was fabricated on a 4-in. graphene wafer (Dragoman et al. 2014b), the diodes having a length of 100 nm, a shoulder din = 100 nm and a neck (dout ) of only 30 nm. The fabrication of the diodes involved the following steps: (i) e-beam lithography patterning of the regions without graphene monolayers, (ii) PMMA deposition, (iii) patterning of the graphene shapes with an e-beam, (iv) RIE equipment to cut the graphene in trapezoidal (a) Diode neck 28 nm (b) Fig.
A schematic representation of a ballistic Schottky diode is shown in Fig. 56 (Dragoman et al. 2010). It consists of two electrodes separated by a distance L, which must be less than the mean-free-path of carriers in graphene at room temperature, and an oblique gate with tilting angle h placed between the two diode terminals. This device is similar to the recently fabricated ballistic transistor with an oblique gate described above in this chapter. A gate voltage VG has the role of modulating the transmission coefﬁcient T in graphene, which is less than 1 only at oblique incidence, as can be seen Fig.
This extraordinary stability is due to the thermal properties of graphene, temperatures as high as 900 K being not sufﬁcient to break the carbon-carbon bonds. 4, respectively. Cr/Au Graphene Si3N4 SiO2 n/p type Si Doped Si Fig. 52 The bilayer graphene/Si/SiO2/Si3N4/Cr/Au diode V 46 1 2D Carbon-Based Nanoelectronics Ohmic contact Ti/Al/Ni/Au CVD graphene Cr/Au SiO2 Sapphire/n-GaN Fig. 53 The graphene/n-GaN diode The graphene diodes presented above have DC characteristics that can be changed under the influence of various adsorbates, such as liquids and gases.
2D Nanoelectronics: Physics and Devices of Atomically Thin Materials by Mircea Dragoman, Daniela Dragoman