By Harland G. Tompkins
A User's consultant to Ellipsometry will let readers to maneuver past constrained turn-key purposes of ellipsometers. as well as its entire discussions of the size of movie thickness and optical constants in movie, it additionally considers the trajectories of the ellipsometric parameters Del and Psi and the way alterations in fabrics impact parameters. This quantity additionally addresses using polysilicon, a cloth generally hired within the microelectronics undefined, and the consequences of substrate roughness. 3 appendices offer valuable references.
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Extra info for A User's Guide to Ellipsometry
Let us first suppose that we will have a nitride film being deposited on top of 1100 Ä of silicon dioxide on top of the silicon substrate. For reference, we show the trajectory for silicon nitride only (also shown in Figure 3-8). The trajectory for the oxide film up to a thickness of 1100 Ä is shown in Figure 3-12 as the thin solid line. 81°. This trajectory and the reference trajectory mentioned above are calculated using the one-film program listed in Appendix A. Then, using a two-film program, we calculate the trajec tory for a growing nitride film.
H. Dill, IBM Journal of Research & Development, 17,472 (1973). Chapter 3 Using Optical Parameters to Determine Material Properties The point was made in Chapter 1, and we repeat it here, that contrary to popular belief, ellipsometers do not measure the thickness of films. Ellipsometers measure the quantities Δ and Ψ. We use these quantities along with an assumed model to calculate material properties. The reliability of the calculated properties is only as good as the assumed model. If an improper model is assumed, although the values of Δ and Ψ are correct, the calculated quantities may well be meaningless.
Let us first consider a dielectric film on top of another dielectric film. 5°. Let us first suppose that we will have a nitride film being deposited on top of 1100 Ä of silicon dioxide on top of the silicon substrate. For reference, we show the trajectory for silicon nitride only (also shown in Figure 3-8). The trajectory for the oxide film up to a thickness of 1100 Ä is shown in Figure 3-12 as the thin solid line. 81°. This trajectory and the reference trajectory mentioned above are calculated using the one-film program listed in Appendix A.
A User's Guide to Ellipsometry by Harland G. Tompkins