By Peter W. Hawkes
Advances in Imaging & Electron Physics merges long-running serials-Advances in Electronics & Electron Physics and Advances in Optical & Electron Microscopy. The sequence positive factors prolonged articles at the physics of electron units (especially semiconductor devices), particle optics at low and high energies, microlithography, photograph technology and electronic snapshot processing, electromagnetic wave propagation, electron microscopy, and the computing equipment utilized in a majority of these domains.
- Contributions from major professionals
- Informs and updates on all of the most up-to-date advancements within the field
Read Online or Download Advances in Imaging and Electron Physics, Volume 183 PDF
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Additional resources for Advances in Imaging and Electron Physics, Volume 183
2011) recently carried out a Monte Carlo study of these two effects and came to the conclusion that the patch ﬁelds are the dominant factor in the SE yield causing such a contrast. El-Gomati and Wells (2001) were the ﬁrst to suggest that such p-n contrast depends to a large extent on the surface chemical state or composition of the sample being imaged. In their paper, these authors analyzed the surface of the imaged sample using Auger electron spectroscopy, which can identify the material that forms the top few atomic layers of a solid.
Field-emission SEM imaging of compositional and doping layer semiconductor superlattices, Ultramicroscopy, 58, 104–113. , & El Gomati, M. M. (2006). Scanning Auger Electron Microscopy. Chichester, UK: Wiley. , Kaganovich, I. , Fisch, N. , & Smolyakov, V. (2011). Effect of secondary electron emission on electron cross-ﬁeld current in E x B discharges. IEEE Transactions on Plasma Science, 39, 995–1006. Reimer, L. (1985). Scanning Electron Microscopy. Berlin: Springer Verlag. Ritchie, N. W. M. (2005).
Toward Quantitative Scanning Electron Microscopy 39 Mott, N. F. (1929). The scattering of fast electrons by atomic nuclei. Proceedings of the Royal Society A, 124, 425–442. , & Frank, L. (2002). Imaging of the boron doping in silicon using low-energy SEM. Ultramicroscopy, 93, 223–243. , & Frank, L. (2003). Scanning low-energy electron microscopy. Advances in Imaging and Electron Physics, 128, 309–443. oxford-instruments. pdf Petrovic, D. , Castell, M. , & Cole, J. S. (1995). Field-emission SEM imaging of compositional and doping layer semiconductor superlattices, Ultramicroscopy, 58, 104–113.
Advances in Imaging and Electron Physics, Volume 183 by Peter W. Hawkes